CSD18503Q5A, Trans MOSFET N-CH Si 40V 19A 8-Pin VSONP EP T/R
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Описание
Semiconductor - Discrete > Transistors > FET - MOSFET
CSD1850xQ5A 40V N-Channel NexFET Power MOSFETsTexas Instruments CSD1850xQ5A devices are 40V N-Channel NexFET Power MOSFETs that are designed to minimize losses in power conversion applications. TI CSD18501Q5A features R DS(ON) Max @ VGS=4.5V of 4.3mΩ and R DS(ON) Max @ VGS=10V of 3.2mΩ while CSD18503Q5A features R DS(ON) Max @ VGS=4.5V of 6.2mΩ and R DS(ON) Max @ VGS=10V of 4.3mΩ. CSD18504Q5A features R DS(ON) Max @ VGS=4.5V of 9.8mΩ and R DS(ON) Max @ VGS=10V of 6.6mΩ. Texas Instruments CSD1850xQ5A 40V N-channel NexFET Power MOSFETs are ideal for use in DC-DC conversion, secondary side synchronous rectifier, and battery motor control applications.
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 2.6 ns |
Forward Transconductance - Min: | 100 S |
Id - Continuous Drain Current: | 121 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | VSONP-8 |
Pd - Power Dissipation: | 120 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 27 nC |
Rds On - Drain-Source Resistance: | 4.3 mOhms |
Rise Time: | 8.8 ns |
Series: | CSD18503Q5A |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 15 ns |
Typical Turn-On Delay Time: | 4.5 ns |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
Brand | Texas Instruments |
Channel Mode | Enhancement |
Configuration | 1 N-Channel |
Factory Pack Quantity | 250 |
Fall Time | 2.6 ns |
Forward Transconductance - Min | 100 S |
Id - Continuous Drain Current | 121 A |
Manufacturer | Texas Instruments |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | VSON-8 |
Packaging | Reel |
Pd - Power Dissipation | 120 W |
Product Category | MOSFET |
Qg - Gate Charge | 32 nC |
Rds On - Drain-Source Resistance | 3.4 mOhms |
Rise Time | 8.8 ns |
RoHS | No |
Series | CSD18503Q5A |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 15 ns |
Typical Turn-On Delay Time | 4.5 ns |
Vds - Drain-Source Breakdown Voltage | 40 V |
Vgs - Gate-Source Voltage | +/-20 V |
Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Вес, г | 1 |
Техническая документация
Документация
pdf, 374 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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