AUIRF1324WL, Транзистор N-МОП, полевой, HEXFET, 24В, 382А, 300Вт, TO262ВтL

Фото 1/2 AUIRF1324WL, Транзистор N-МОП, полевой, HEXFET, 24В, 382А, 300Вт, TO262ВтL
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Номенклатурный номер: 8022464528
Артикул: AUIRF1324WL

Описание

20V to 40V N-Channel Automotive MOSFETs
Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8), TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.

Технические параметры

Brand: Infineon Technologies
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 1000
Fall Time: 110 ns
Forward Transconductance - Min: 210 S
Id - Continuous Drain Current: 382 A
Manufacturer: Infineon
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Number of Channels: 1 Channel
Package / Case: TO-262-3
Packaging: Tube
Pd - Power Dissipation: 300 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 120 nC
Qualification: AEC-Q101
Rds On - Drain-Source Resistance: 1.3 mOhms
Rise Time: 200 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 75 ns
Typical Turn-On Delay Time: 18 ns
Vds - Drain-Source Breakdown Voltage: 24 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Channel Type N
Maximum Continuous Drain Current 382 A
Package Type TO-262 WideLead
Вес, г 4.77

Техническая документация

Datasheet
pdf, 255 КБ
Datasheet
pdf, 240 КБ

Дополнительная информация

Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем