CSD18502Q5B

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200 руб.

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Добавить в корзину 2 шт. на сумму 400 руб.

Номенклатурный номер: 8022681948

Power Field-Effect Transistor, 26A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	204 A
Maximum Drain Source Resistance	3.3 mΩ
Maximum Drain Source Voltage	40 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	2.2V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	3.2 W
Minimum Gate Threshold Voltage	1.5V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	VSON-CLIP
Pin Count	8
Series	NexFET
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	25 nC @ 4.5 V
Width	5.1mm
Automotive	No
Maximum Continuous Drain Current - (A)	26
Maximum Drain Source Resistance - (mOhm)	2.3@10V
Maximum Drain Source Voltage - (V)	40
Maximum Gate Source Voltage - (V)	??20
Maximum Gate Threshold Voltage - (V)	2.2
Maximum Power Dissipation - (mW)	3200
Military	No
Operating Temperature - (??C)	-55~150
Packaging	Tape and Reel
Process Technology	NexFET
Standard Package Name	SON
Supplier Package	VSON-CLIP EP
Typical Gate Charge @ 10V - (nC)	52
Typical Gate Charge @ Vgs - (nC)	25@4.5VI52@10V
Typical Input Capacitance @ Vds - (pF)	3900@20V