BFU550XAR

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18 руб.

Кратность заказа 3000 шт.

Добавить в корзину 3000 шт. на сумму 54 000 руб.

Номенклатурный номер: 8023500106

Транзисторы RF-широкополосные

транз: RF NPN-11ГГц 12V 50mA, 21,5dB, 450mВт

Brand:	NXP Semiconductors
Collector- Base Voltage VCBO:	24 V
Collector- Emitter Voltage VCEO Max:	16 V
Configuration:	Single
Continuous Collector Current:	15 mA
DC Collector/Base Gain hfe Min:	60
DC Current Gain hFE Max:	200
Emitter- Base Voltage VEBO:	2 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	11 GHz
Manufacturer:	NXP
Maximum DC Collector Current:	80 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-40 C
Mounting Style:	SMD/SMT
Operating Frequency:	900 MHz
Operating Temperature Range:	-40 C to+150 C
Output Power:	13.5 dBm
Package / Case:	SOT143B-4
Part # Aliases:	934067708215
Pd - Power Dissipation:	450 mW
Product Category:	RF Bipolar Transistors
Product Type:	RF Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Transistor Type:	Bipolar Wideband
Type:	Wideband RF Transistor
Current - Collector (Ic) (Max)	50mA
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 15mA, 8V
Family	Transistors-Bipolar(BJT)-RF
Frequency - Transition	11GHz
Gain	21.5dB
Manufacturer	NXP Semiconductors
Mounting Type	Surface Mount, Gull Wing
Noise Figure (dB Typ @ f)	0.75db @ 900MHz
Package / Case	TO-253-4, TO-253AA
Packaging	Digi-Reel®
Part Status	Active
Power - Max	450mW
Series	Automotive, AEC-Q101
Standard Package	1
Supplier Device Package	SOT-143B
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Вес, г	0.0525

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