STGB10NC60KDT4, Транзистор БТИЗ, 600В 20A 65Вт D Pak
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1318 шт., срок 7 недель
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Описание
Описание Транзистор БТИЗ, 600В 20A 65Вт DІPak Характеристики
Категория | Транзистор |
Тип | БТИЗ |
Вид | IGBT |
Технические параметры
Base Part Number | STG*10NC |
Current - Collector (Ic) (Max) | 20A |
Current - Collector Pulsed (Icm) | 30A |
Gate Charge | 19nC |
IGBT Type | - |
Input Type | Standard |
Manufacturer | STMicroelectronics |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C(TJ) |
Package / Case | TO-263-3, DВІPak(2 Leads+Tab), TO-263AB |
Packaging | Tape & Reel(TR) |
Part Status | Active |
Power - Max | 65W |
Reverse Recovery Time (trr) | 22ns |
Series | PowerMESHв(ў |
Supplier Device Package | D2PAK |
Switching Energy | 55ВµJ(on), 85ВµJ(off) |
Td (on/off) @ 25В°C | 17ns/72ns |
Test Condition | 390V, 5A, 10Ohm, 15V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 5A |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Brand: | STMicroelectronics |
Collector- Emitter Voltage VCEO Max: | 600 V |
Collector-Emitter Saturation Voltage: | 2.2 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 20 A |
Continuous Collector Current Ic Max: | 20 A |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Manufacturer: | STMicroelectronics |
Maximum Gate Emitter Voltage: | -20 V, 20 V |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | D2PAK-3 |
Pd - Power Dissipation: | 65 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Series: | STGB10NC60KDT4 |
Subcategory: | IGBTs |
Technology: | Si |
Channel Type | N |
Maximum Collector Emitter Voltage | 600 V |
Maximum Continuous Collector Current | 20 A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 65 W |
Minimum Operating Temperature | -55 °C |
Package Type | D2PAK(TO-263) |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Automotive | No |
Configuration | Single |
ECCN (US) | EAR99 |
Lead Shape | Gull-wing |
Maximum Collector-Emitter Voltage (V) | 600 |
Maximum Continuous Collector Current (A) | 20 |
Maximum Gate Emitter Leakage Current (uA) | 0.1 |
Maximum Gate Emitter Voltage (V) | ±20 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 65 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
PCB changed | 2 |
PPAP | No |
Standard Package Name | TO-263 |
Supplier Package | D2PAK |
Supplier Temperature Grade | Industrial |
Tab | Tab |
Typical Collector Emitter Saturation Voltage (V) | 2.2 |
Вес, г | 2.8 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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