STD1NK60T4
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см. техническую документацию
см. техническую документацию
80000 шт. со склада г.Москва, срок 2 недели
23 руб.
Мин. кол-во для заказа 2500 шт.
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Описание
Описание Транзистор N-МОП, полевой, 600В 1A 30Вт 8,5Ом TO25 Характеристики
Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Максимальное напряжение сток-исток Uси,В | 600 | |
Максимальное напряжение затвор-исток Uзи макс.,В | 30 | |
Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 8.5 Ом/0.5А, 10В | |
Максимальная рассеиваемая мощность Pси макс..Вт | 30 | |
Крутизна характеристики, S | - | |
Корпус | DPAK/TO-252AA | |
Особенности | Logic Level Gate | |
Пороговое напряжение на затворе | 3.7 | |
кол-во в упаковке | 2500 | |
Channel Mode | Enhancement | |
Channel Type | N | |
Maximum Continuous Drain Current | 1 A | |
Maximum Drain Source Resistance | 8.5 Ω | |
Maximum Drain Source Voltage | 600 V | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Maximum Gate Threshold Voltage | 3.7V | |
Maximum Operating Temperature | +150 °C | |
Maximum Power Dissipation | 30 W | |
Minimum Gate Threshold Voltage | 2.25V | |
Minimum Operating Temperature | -55 °C | |
Mounting Type | Surface Mount | |
Number of Elements per Chip | 1 | |
Package Type | DPAK(TO-252) | |
Pin Count | 3 | |
Series | MDmesh, SuperMESH | |
Transistor Configuration | Single | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 7 nC @ 10 V | |
Width | 6.2mm | |
Automotive | No | |
Configuration | Single | |
ECCN (US) | EAR99 | |
EU RoHS | Compliant with Exemption | |
Lead Shape | Gull-wing | |
Maximum Continuous Drain Current (A) | 1 | |
Maximum Drain Source Resistance (mOhm) | 8500@10V | |
Maximum Drain Source Voltage (V) | 600 | |
Maximum Gate Source Voltage (V) | ±30 | |
Maximum Operating Temperature (°C) | 150 | |
Maximum Power Dissipation (mW) | 30000 | |
Minimum Operating Temperature (°C) | -55 | |
Mounting | Surface Mount | |
Packaging | Tape and Reel | |
Part Status | Active | |
PCB changed | 2 | |
PPAP | No | |
Process Technology | SuperMESH | |
Product Category | Power MOSFET | |
Standard Package Name | TO-252 | |
Supplier Package | DPAK | |
Supplier Temperature Grade | Industrial | |
Tab | Tab | |
Typical Fall Time (ns) | 25 | |
Typical Gate Charge @ 10V (nC) | 7 | |
Typical Gate Charge @ Vgs (nC) | 7@10V | |
Typical Input Capacitance @ Vds (pF) | 156@25V | |
Typical Rise Time (ns) | 5 | |
Typical Turn-Off Delay Time (ns) | 19 | |
Typical Turn-On Delay Time (ns) | 6.5 | |
Brand: | STMicroelectronics | |
Channel Mode: | Enhancement | |
Configuration: | Single | |
Factory Pack Quantity: Factory Pack Quantity: | 2500 | |
Fall Time: | 25 ns | |
Forward Transconductance - Min: | 1 S | |
Id - Continuous Drain Current: | 1 A | |
Manufacturer: | STMicroelectronics | |
Maximum Operating Temperature: | +150 C | |
Minimum Operating Temperature: | -55 C | |
Mounting Style: | SMD/SMT | |
Number of Channels: | 1 Channel | |
Package / Case: | DPAK-3(TO-252-3) | |
Pd - Power Dissipation: | 30 W | |
Product Category: | MOSFET | |
Product Type: | MOSFET | |
Qg - Gate Charge: | 7 nC | |
Rds On - Drain-Source Resistance: | 8.5 Ohms | |
Rise Time: | 5 ns | |
Series: | STD1NK60T4 | |
Subcategory: | MOSFETs | |
Technology: | Si | |
Tradename: | SuperMESH | |
Transistor Polarity: | N-Channel | |
Transistor Type: | 1 N-Channel MOSFET | |
Type: | MOSFET | |
Typical Turn-Off Delay Time: | 19 ns | |
Typical Turn-On Delay Time: | 6.5 ns | |
Vds - Drain-Source Breakdown Voltage: | 600 V | |
Vgs - Gate-Source Voltage: | -30 V, +30 V | |
Vgs th - Gate-Source Threshold Voltage: | 2.25 V | |
Brand | STMicroelectronics | |
Factory Pack Quantity | 2500 | |
Fall Time | 25 ns | |
Forward Transconductance - Min | 1 S | |
Height | 2.4 mm | |
Id - Continuous Drain Current | 1 A | |
Length | 6.6 mm | |
Manufacturer | STMicroelectronics | |
Mounting Style | SMD/SMT | |
Number of Channels | 1 Channel | |
Package / Case | TO-252-3 | |
Pd - Power Dissipation | 30 W | |
Qg - Gate Charge | 7 nC | |
Rds On - Drain-Source Resistance | 8 Ohms | |
Rise Time | 5 ns | |
RoHS | Details | |
Technology | Si | |
Transistor Polarity | N-Channel | |
Transistor Type | 1 N-Channel | |
Type | MOSFET | |
Typical Turn-Off Delay Time | 19 ns | |
Typical Turn-On Delay Time | 6.5 ns | |
Vds - Drain-Source Breakdown Voltage | 600 V | |
Vgs - Gate-Source Voltage | 30 V | |
Вес, г | 0.47 |
Техническая документация
Datasheet
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Документация
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Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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