SI6968BEDQ-T1-GE3, N-Channel MOSFET, 5.2 A, 20 V TSSOP-8 SI6968BEDQ-T1-GE3

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Номенклатурный номер: 8030793618

Артикул: SI6968BEDQ-T1-GE3

Semiconductors\Discrete Semiconductors\MOSFETs

The Vishay Semiconductor dual N-channel mosfet common drain with ESD protection and Pb containing terminations are not RoHS-compliant.

Channel Type	N
Maximum Continuous Drain Current	5.2 A
Maximum Drain Source Voltage	20 V
Mounting Type	Surface Mount
Package Type	TSSOP-8
Automotive	No
Channel Mode	Enhancement
Configuration	Dual Common Drain Dual Source
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	5.2
Maximum Drain Source Resistance (mOhm)	22@4.5V
Maximum Drain Source Voltage (V)	20
Maximum Gate Source Voltage (V)	±12
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	1000
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	2
Packaging	Tape and Reel
Part Status	Active
PCB changed	8
Pin Count	8
PPAP	No
Product Category	Power MOSFET
Standard Package Name	SOP
Supplier Package	TSSOP
Typical Fall Time (ns)	510
Typical Gate Charge @ Vgs (nC)	12@4.5V
Typical Rise Time (ns)	330
Typical Turn-Off Delay Time (ns)	860
Typical Turn-On Delay Time (ns)	245