FF200R12KE3HOSA1, Биполярный транзистор IGBT, 1200 В, 200 А, 1050Вт

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19 380 руб.

от 2 шт. — 18 380 руб.

от 3 шт. — 17 810 руб.

от 4 шт. — 17 620 руб.

Добавить в корзину 1 шт. на сумму 19 380 руб.

Номенклатурный номер: 8050823769

Артикул: FF200R12KE3HOSA1

Транзисторы / IGBT (БТИЗ) транзисторы / Силовые модули IGBT

Биполярный транзистор IGBT, 1200 В, 200 А, 1050Вт

Корпус	62 mm
Base Product Number	FF200R12 ->
Configuration	2 Independent
Current - Collector Cutoff (Max)	5mA
ECCN	EAR99
HTSUS	8541.29.0095
Input	Standard
Input Capacitance (Cies) @ Vce	14nF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Chassis Mount
NTC Thermistor	Yes
Operating Temperature	-40В°C ~ 125В°C
Package	Bulk
Package / Case	Module
Power - Max	1050W
REACH Status	REACH Unaffected
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max)	1200V
Brand:	Infineon Technologies
Collector- Emitter Voltage VCEO Max:	1200 V
Collector-Emitter Saturation Voltage:	1.7 V
Configuration:	Dual
Continuous Collector Current at 25 C:	295 A
Factory Pack Quantity: Factory Pack Quantity:	10
Gate-Emitter Leakage Current:	400 nA
Manufacturer:	Infineon
Maximum Gate Emitter Voltage:	20 V
Maximum Operating Temperature:	+125 C
Minimum Operating Temperature:	-40 C
Mounting Style:	Chassis Mount
Package/Case:	IS5a(62 mm)-7
Packaging:	Tray
Part # Aliases:	SP000100735 FF200R12KE3HOSA1
Pd - Power Dissipation:	1050 W
Product Category:	IGBT Modules
Product Type:	IGBT Modules
Product:	IGBT Silicon Modules
Series:	Trenchstop IGBT3-E3
Subcategory:	IGBTs
Tradename:	TRENCHSTOP
Вес, г	340