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STP5NK50ZFP, Транзистор полевой MOSFET N-канальный 500В 4.4А 25Вт

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514 шт. со склада г.Москва, срок 9 дней

140 руб.

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от 37 шт. — 106 руб.

от 100 шт. — 98 руб.

Добавить в корзину 4 шт. на сумму 560 руб.

Альтернативные предложения2

Номенклатурный номер: 8320112929

Артикул: STP5NK50ZFP

Бренд: STMicroelectronics

Описание

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы

Транзистор полевой MOSFET N-канальный 500В 4.4А 25Вт

Технические параметры

Корпус	TO-220F
Current - Continuous Drain (Id) @ 25В°C	4.4A(Tc)
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	535pF @ 25V
Manufacturer	STMicroelectronics
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-220-3 Full Pack
Packaging	Tube
Part Status	Not For New Designs
Power Dissipation (Max)	70W(Tc)
Rds On (Max) @ Id, Vgs	1.5Ohm @ 2.2A, 10V
Series	SuperMESHв(ў
Supplier Device Package	TO-220FP
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±30V
Vgs(th) (Max) @ Id	4.5V @ 50ВµA
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	15 ns
Id - Continuous Drain Current:	4.4 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-220FP-3
Packaging:	Tube
Pd - Power Dissipation:	25 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	20 nC
Rds On - Drain-Source Resistance:	1.5 Ohms
Rise Time:	10 ns
Series:	STP5NK50ZFP
Subcategory:	MOSFETs
Technology:	Si
Tradename:	SuperMESH
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	15 ns
Vds - Drain-Source Breakdown Voltage:	500 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	4.4
Maximum Drain Source Resistance (mOhm)	1500@10V
Maximum Drain Source Voltage (V)	500
Maximum Gate Source Voltage (V)	±30
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	25000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Number of Elements per Chip	1
PCB changed	3
Pin Count	3
PPAP	No
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-220FP
Supplier Temperature Grade	Industrial
Tab	Tab
Typical Fall Time (ns)	15
Typical Gate Charge @ 10V (nC)	20
Typical Gate Charge @ Vgs (nC)	20@10V
Typical Input Capacitance @ Vds (pF)	535@25V
Typical Rise Time (ns)	10
Typical Turn-Off Delay Time (ns)	32
Typical Turn-On Delay Time (ns)	15
Вес, г	2