BCW66KHE6327, Биполярный транзистор, NPN, 45 В, 0.8 А, 0.33 Вт

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21 руб.

Мин. кол-во для заказа 22 шт.

от 65 шт. — 18 руб.

от 130 шт. — 17 руб.

от 259 шт. — 16 руб.

Добавить в корзину 22 шт. на сумму 462 руб.

Номенклатурный номер: 8377540780

Артикул: BCW66KHE6327

Транзисторы / Биполярные транзисторы / Одиночные биполярные транзисторы

Биполярный транзистор, NPN, 45 В, 0.8 А, 0.33 Вт

Корпус	sot-23
Case	SOT23
Collector current	0.8A
Collector-emitter voltage	45V
Frequency	170MHz
Manufacturer	INFINEON TECHNOLOGIES
Mounting	SMD
Polarisation	bipolar
Power dissipation	0.5W
Type of transistor	NPN
Base Part Number	BCW66
Current - Collector (Ic) (Max)	800mA
Current - Collector Cutoff (Max)	20nA(ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	250 @ 100mA, 1V
Frequency - Transition	170MHz
Mounting Type	Surface Mount
Operating Temperature	150В°C(TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Packaging	Tape & Reel(TR)
Part Status	Last Time Buy
Power - Max	500mW
Series	-
Supplier Device Package	SOT-23-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	450mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	45V
Brand:	Infineon Technologies
Collector- Base Voltage VCBO:	75 V
Collector- Emitter Voltage VCEO Max:	45 V
Collector-Emitter Saturation Voltage:	450 mV
Configuration:	Single
Continuous Collector Current:	800 mA
DC Collector/Base Gain hFE Min:	250
DC Current Gain hFE Max:	630
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	170 MHz
Manufacturer:	Infineon
Maximum DC Collector Current:	800 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Part # Aliases:	BCW 66KH E6327 SP000271906
Pd - Power Dissipation:	500 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Qualification:	AEC-Q101
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	0.05