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The IRF1010EZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
• Advanced process technology
• Dynamic dV/dt rating
• Repetitive avalanche allowed up to Tjmax
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: TO-220AB, инфо: MOSFET N-CH 60V 75A TO-220AB