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The IRFR120NTRPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation level of 1.5W is possible in a typical surface-mount application.
• Advanced process technology
• Fully avalanche rating
• Low static drain-to-source ON-resistance
• Dynamic dV/dt rating
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: DPAK/TO252, инфо: MOSFET N-CH 100V 9.4A DPAK