ZXTN25040DFLTA, Trans GP BJT NPN 130V 1.5A 350mW 3-Pin SOT-23 T/R

Фото 1/4 ZXTN25040DFLTA, Trans GP BJT NPN 130V 1.5A 350mW 3-Pin SOT-23 T/R
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см. техническую документацию
30 руб.
Кратность заказа 3000 шт.
от 9000 шт.28 руб.
от 24000 шт.27 руб.
Добавить в корзину 3000 шт. на сумму 90 000 руб.
Номенклатурный номер: 8001141310
Артикул: ZXTN25040DFLTA
Бренд: DIODES INC.

Описание

Diodes, Transistors and Thyristors\Bipolar Transistors\GP BJT
Trans GP BJT NPN 130V 1.5A 350mW 3-Pin SOT-23 T/R

Технические параметры

Automotive No
Configuration Single
ECCN (US) EAR99
EU RoHS Compliant
Lead Shape Gull-wing
Maximum Base Emitter Saturation Voltage (V) 0.95@30mA@1.5A
Maximum Collector Base Voltage (V) 130
Maximum Collector Cut-Off Current (nA) 50
Maximum Collector-Emitter Voltage (V) 130
Maximum DC Collector Current (A) 1.5
Maximum Emitter Base Voltage (V) 7
Maximum Operating Temperature (°C) 150
Maximum Power Dissipation (mW) 350
Maximum Transition Frequency (MHz) 190(Typ)
Minimum DC Current Gain 300@10mA@2V|300@1A@2V|170@1.5A@2V|25@4A@2V
Minimum Operating Temperature (°C) -55
Mounting Surface Mount
Number of Elements per Chip 1
Packaging Tape and Reel
Part Status Active
PCB changed 3
Pin Count 3
PPAP No
Product Category Bipolar Small Signal
Standard Package Name SOT
Supplier Package SOT-23
Type NPN
Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 130 V
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 235 mV
Configuration: Single
Continuous Collector Current: 1.5 A
DC Collector/Base Gain hfe Min: 25 at 4 A, 2 V
DC Current Gain hFE Max: 900 at 10 mA, 2 V
Emitter- Base Voltage VEBO: 7 V
Factory Pack Quantity: Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 190 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 1.5 A
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Pd - Power Dissipation: 350 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: ZXTN25040
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN
Maximum Collector Base Voltage 130 V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 1.5 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Frequency 190 MHz
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 350 mW
Mounting Type Surface Mount
Package Type SOT-23
Transistor Configuration Single
Transistor Type NPN
Вес, г 1

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet
pdf, 427 КБ
Datasheet
pdf, 435 КБ
Datasheet ZXTN25040DFLTA
pdf, 440 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов