FDS4935A, Сборка из полевых транзисторов, 2P-канальный, 30 В, 7 А, 2 Вт
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Описание
Транзисторы / Полевые транзисторы / Сборки MOSFET транзисторов
Сборка из полевых транзисторов, 2P-канальный, 30 В, 7 А, 2 Вт
Технические параметры
| Корпус | so-8 | |
| Brand | ON Semiconductor/Fairchild | |
| Channel Mode | Enhancement | |
| Configuration | Dual Dual Drain | |
| Factory Pack Quantity | 2500 | |
| Fall Time | 25 ns | |
| Forward Transconductance - Min | 19 S | |
| Height | 1.75 mm | |
| Id - Continuous Drain Current | -7 A | |
| Length | 4.9 mm | |
| Manufacturer | ON Semiconductor | |
| Maximum Operating Temperature | +175 C | |
| Minimum Operating Temperature | -55 C | |
| Mounting Style | SMD/SMT | |
| Number of Channels | 2 Channel | |
| Package / Case | SO-8 | |
| Packaging | Cut Tape | |
| Part # Aliases | FDS4935A_NL | |
| Pd - Power Dissipation | 2 W | |
| Product Category | MOSFET | |
| Rds On - Drain-Source Resistance | 23 mOhms | |
| Rise Time | 10 ns | |
| RoHS | Details | |
| Series | FDS4935A | |
| Technology | Si | |
| Tradename | PowerTrench | |
| Transistor Polarity | P-Channel | |
| Transistor Type | 2 P-Channel | |
| Type | MOSFET | |
| Typical Turn-Off Delay Time | 48 ns | |
| Typical Turn-On Delay Time | 13 ns | |
| Unit Weight | 0.006596 oz | |
| Vds - Drain-Source Breakdown Voltage | -30 V | |
| Vgs - Gate-Source Voltage | 20 V | |
| Width | 3.9 mm | |
| Automotive | No | |
| Channel Type | P | |
| ECCN (US) | EAR99 | |
| EU RoHS | Compliant | |
| Lead Shape | Gull-wing | |
| Maximum Continuous Drain Current (A) | 7 | |
| Maximum Drain Source Resistance (mOhm) | 23@10V | |
| Maximum Drain Source Voltage (V) | 30 | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Maximum Operating Temperature (°C) | 175 | |
| Maximum Power Dissipation (mW) | 2000 | |
| Minimum Operating Temperature (°C) | -55 | |
| Mounting | Surface Mount | |
| Number of Elements per Chip | 2 | |
| Part Status | Active | |
| PCB changed | 8 | |
| Pin Count | 8 | |
| PPAP | No | |
| Process Technology | TMOS | |
| Standard Package Name | SO | |
| Supplier Package | SOIC | |
| Typical Fall Time (ns) | 25 | |
| Typical Gate Charge @ Vgs (nC) | 15@5V | |
| Typical Input Capacitance @ Vds (pF) | 1233@15V | |
| Typical Rise Time (ns) | 10 | |
| Typical Turn-Off Delay Time (ns) | 48 | |
| Typical Turn-On Delay Time (ns) | 13 | |
| Maximum Continuous Drain Current | 7 A | |
| Maximum Drain Source Resistance | 23 mΩ | |
| Maximum Drain Source Voltage | 30 V | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Power Dissipation | 2 W | |
| Minimum Gate Threshold Voltage | 1V | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Transistor Configuration | Isolated | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 15 nC @ 5 V | |
| Вес, г | 0.15 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 247 КБ
Datasheet
pdf, 113 КБ
Документация
pdf, 230 КБ
Datasheet FDS4935A
pdf, 230 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
