STP17NK40ZFP транзистор: N-MOSFET 400V 15A 0.25Om
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см. техническую документацию
5000 шт. со склада г.Москва, срок 3-4 дня
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Описание
Описание Транзистор: N-MOSFET, полевой, 400В, 9,4А, 35Вт, TO220FP Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Id - Continuous Drain Current: | 15 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 35 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 65 nC |
| Rds On - Drain-Source Resistance: | 250 mOhms |
| Rise Time: | 23 ns |
| Series: | STP17NK40ZFP |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | SuperMESH |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-On Delay Time: | 25 ns |
| Vds - Drain-Source Breakdown Voltage: | 400 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Height | 9.3 mm |
| Id - Continuous Drain Current | 15 A |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220FP-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 35 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 250 mOhms |
| Rise Time | 23 ns |
| RoHS | Details |
| Series | N-channel MDmesh |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-On Delay Time | 25 ns |
| Vds - Drain-Source Breakdown Voltage | 400 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 4.6 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 15 A |
| Maximum Drain Source Resistance | 250 mΩ |
| Maximum Drain Source Voltage | 400 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Power Dissipation | 35 W |
| Minimum Gate Threshold Voltage | 3V |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220FP |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V |
| Вес, г | 2 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 396 КБ
Datasheet
pdf, 920 КБ
Datasheet STP17NK40ZFP
pdf, 397 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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