DMN6040SSDQ-13, Транзистор
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Описание
Automotive Brushless DC (BLDC) Motor Applications
Diodes Incorporated Automotive Brushless DC (BLDC) Motors offer improved performance, longer lifetime, reduced noise, and greater ease of use when compared to equivalent mechanical solutions. Within the BLDC Motor Systems, MOSFETs are typically configured in a three-phase bridge arrangement to drive the DC motor. The MOSFETs must be capable of handling start-up and stalled motor currents of up to six times the continuous current rating of the motor. The BLDC Motors are extensively used in automotive applications such as fuel pumps, water pumps, and Anti-Lock Braking Systems (ABS), and provide additional torque for power steering systems.
Diodes Incorporated Automotive Brushless DC (BLDC) Motors offer improved performance, longer lifetime, reduced noise, and greater ease of use when compared to equivalent mechanical solutions. Within the BLDC Motor Systems, MOSFETs are typically configured in a three-phase bridge arrangement to drive the DC motor. The MOSFETs must be capable of handling start-up and stalled motor currents of up to six times the continuous current rating of the motor. The BLDC Motors are extensively used in automotive applications such as fuel pumps, water pumps, and Anti-Lock Braking Systems (ABS), and provide additional torque for power steering systems.
Технические параметры
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 4 ns |
| Id - Continuous Drain Current: | 5 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOIC-8 |
| Pd - Power Dissipation: | 1.7 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 22.4 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 40 mOhms |
| Rise Time: | 8.1 ns |
| Series: | DMN6040 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 20.1 ns |
| Typical Turn-On Delay Time: | 6.6 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 0.07 |
Техническая документация
Datasheet
pdf, 469 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
