ZXMN3F30FHTA, Транзистор N-MOSFET, полевой, 30В, 3,7А, 0,95Вт, SOT23
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Описание
Полупроводники\Транзисторы\Транзисторы униполярные\Транзисторы с каналом типа N\Транзисторы с каналом N SMD
Описание Транзистор N-MOSFET, полевой, 30В, 3,7А, 0,95Вт, SOT23 Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 3.8A (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 10V |
| HTSUS | 8541.21.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 318pF @ 15V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Power Dissipation (Max) | 950mW (Ta) |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 3.2A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 3V @ 250ВµA |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 3.8 |
| Maximum Drain Source Resistance (mOhm) | 47 10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1400 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | TMOS |
| Product Category | Power MOSFET |
| Standard Package Name | SOT-23 |
| Supplier Package | SOT-23 |
| Typical Fall Time (ns) | 9.3 |
| Typical Gate Charge @ 10V (nC) | 7.7 |
| Typical Gate Charge @ Vgs (nC) | 7.7 10V |
| Typical Input Capacitance @ Vds (pF) | 318 15V |
| Typical Rise Time (ns) | 2.6 |
| Typical Turn-Off Delay Time (ns) | 17 |
| Typical Turn-On Delay Time (ns) | 1.6 |
| Maximum Continuous Drain Current | 4.6 A |
| Maximum Drain Source Resistance | 65 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.4 W |
| Minimum Operating Temperature | -55 °C |
| Package Type | SOT-23 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 7.7 nC @ 10 V |
| Width | 1.4mm |
| Вес, г | 0.01 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
