D44H8G, Trans GP BJT NPN 60V 10A 2000mW 3-Pin(3+Tab) TO-220AB Tube

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130 руб.

Мин. кол-во для заказа 1250 шт.

Кратность заказа 50 шт.

Добавить в корзину 1250 шт. на сумму 162 500 руб.

Номенклатурный номер: 8003813316

Артикул: D44H8G

Semiconductor - Discrete > Transistors > BJT - General Purpose

Описание Транзистор: NPN, биполярный, 60В, 10А, 50Вт, TO220AB Характеристики

Maximum Collector Emitter Voltage	60 V
Maximum DC Collector Current	10 A
Maximum Emitter Base Voltage	5 V
Maximum Operating Frequency	50 MHz
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2 W
Minimum DC Current Gain	40
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220AB
Pin Count	3
Transistor Configuration	Single
Transistor Type	NPN
Automotive	No
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Material	Si
Maximum Base Emitter Saturation Voltage (V)	1.5@0.8A@8A
Maximum Collector-Emitter Saturation Voltage (V)	1@0.4A@8A
Maximum Collector-Emitter Voltage (V)	60
Maximum DC Collector Current (A)	10
Maximum Emitter Base Voltage (V)	5
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	2000
Maximum Transition Frequency (MHz)	50(Typ)
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Operating Junction Temperature (°C)	-55 to 150
Packaging	Tube
Part Status	Active
PCB changed	3
PPAP	No
Product Category	Bipolar Power
Standard Package Name	TO
Supplier Package	TO-220AB
Tab	Tab
Type	NPN
Вес, г	1