ZTX951
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см. техническую документацию
400 руб.
от 2 шт. —
310 руб.
от 5 шт. —
246 руб.
от 10 шт. —
221.76 руб.
Добавить в корзину 1 шт.
на сумму 400 руб.
Описание
Электроэлемент
BIPOLAR TRANSISTOR, PNP, -60V, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:60V, Transition Frequency ft:120MHz, Power Dissipation Pd:1.2W, DC Collector Current:-4A, DC Current Gain hFE:200hFE, No. of Pins:3Pins, MSL:-, RoHS Compliant: Yes
Технические параметры
Brand | Diodes Incorporated |
Collector- Base Voltage VCBO | -100 V |
Collector- Emitter Voltage VCEO Max | 60 V |
Configuration | Single |
Continuous Collector Current | -4 A |
Emitter- Base Voltage VEBO | -6 V |
Factory Pack Quantity | 4000 |
Gain Bandwidth Product fT | 120 MHz |
Height | 4.01 mm |
Length | 4.77 mm |
Manufacturer | Diodes Incorporated |
Maximum DC Collector Current | 4 A |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | Through Hole |
Package / Case | TO-92-3 |
Packaging | Bulk |
Pd - Power Dissipation | 1.2 W |
Product Category | Bipolar Transistors-BJT |
RoHS | Details |
Series | ZTX951 |
Transistor Polarity | PNP |
Unit Weight | 0.015873 oz |
Width | 2.41 mm |
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 100 V |
Collector- Emitter Voltage VCEO Max: | 60 V |
Collector-Emitter Saturation Voltage: | 220 mV |
Configuration: | Single |
Continuous Collector Current: | -4 A |
Emitter- Base Voltage VEBO: | 6 V |
Factory Pack Quantity: Factory Pack Quantity: | 4000 |
Gain Bandwidth Product fT: | 120 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 4 A |
Maximum Operating Temperature: | +200 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package / Case: | TO-92-3 |
Packaging: | Bulk |
Pd - Power Dissipation: | 1.2 W |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | ZTX951 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | PNP |
Automotive | No |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Lead Shape | Through Hole |
Material | Si |
Maximum Base Emitter Saturation Voltage (V) | 1.1@400mA@4A |
Maximum Collector Base Voltage (V) | 100 |
Maximum Collector Cut-Off Current (nA) | 50 |
Maximum Collector-Emitter Voltage (V) | 60 |
Maximum DC Collector Current (A) | 4 |
Maximum Emitter Base Voltage (V) | 6 |
Maximum Operating Temperature (°C) | 200 |
Maximum Power Dissipation (mW) | 1200 |
Maximum Transition Frequency (MHz) | 120(Typ) |
Minimum DC Current Gain | 100@10mA@1V|100@1A@1V|75@4A@1V|10@10A@1V |
Minimum Operating Temperature (°C) | -55 |
Mounting | Through Hole |
Number of Elements per Chip | 1 |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Standard Package Name | TO-92 |
Supplier Package | E-Line |
Type | PNP |
Maximum Collector Base Voltage | 100 V |
Maximum Collector Emitter Voltage | -60 V |
Maximum Emitter Base Voltage | 6 V |
Maximum Operating Frequency | 120 MHz |
Maximum Power Dissipation | 1.2 W |
Mounting Type | Through Hole |
Package Type | TO-92 |
Transistor Configuration | Single |
Transistor Type | PNP |
Вес, г | 0.242 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов