STD11NM65N, STD11NM65N STMicroelectronics Transistors MOSFETs N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com
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840 шт., срок 6-8 недель
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Описание
Diodes, Transistors and Thyristors\FET Transistors\MOSFETs
STD11NM65N STMicroelectronics Transistors MOSFETs N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 11 |
| Maximum Drain Source Resistance (mOhm) | 455@10V |
| Maximum Drain Source Voltage (V) | 650 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±25 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 110000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | MDmesh |
| Product Category | Power MOSFET |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Fall Time (ns) | 47 |
| Typical Gate Charge @ 10V (nC) | 29 |
| Typical Gate Charge @ Vgs (nC) | 29@10V |
| Typical Input Capacitance @ Vds (pF) | 800@50V |
| Typical Rise Time (ns) | 10.8 |
| Typical Turn-Off Delay Time (ns) | 11 |
| Typical Turn-On Delay Time (ns) | 15.5 |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Id - Continuous Drain Current: | 11 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Pd - Power Dissipation: | 110 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 29 nC |
| Rds On - Drain-Source Resistance: | 425 mOhms |
| Series: | STD11NM65N |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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