SPA17N80C3
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 380 руб.
от 2 шт. —
1 270 руб.
от 4 шт. —
1 190 руб.
Добавить в корзину 1 шт.
на сумму 1 380 руб.
Описание
Электроэлемент
N-Channel MOSFET, 17 A, 800 V, 3-Pin TO-220FP Infineon SPA17N80C3XKSA1
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 500 |
| Fall Time | 6 ns |
| Forward Transconductance - Min | 15 S |
| Height | 16.15 mm |
| Id - Continuous Drain Current | 17 A |
| Length | 10.65 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220FP-3 |
| Packaging | Tube |
| Part # Aliases | SP000216353 SPA17N80C3XK SPA17N80C3XKSA1 |
| Pd - Power Dissipation | 42 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 177 nC |
| Rds On - Drain-Source Resistance | 250 mOhms |
| Rise Time | 15 ns |
| RoHS | Details |
| Series | CoolMOS C3 |
| Technology | Si |
| Tradename | CoolMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 72 ns |
| Typical Turn-On Delay Time | 25 ns |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Vgs - Gate-Source Voltage | +/-20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V |
| Width | 4.85 mm |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 500 |
| Fall Time: | 6 ns |
| Forward Transconductance - Min: | 15 S |
| Id - Continuous Drain Current: | 17 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Part # Aliases: | SP000216353 SPA17N8C3XK SPA17N80C3XKSA1 |
| Pd - Power Dissipation: | 42 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 177 nC |
| Rds On - Drain-Source Resistance: | 290 mOhms |
| Rise Time: | 15 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 72 ns |
| Typical Turn-On Delay Time: | 25 ns |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
| Вес, г | 6 |
Техническая документация
Datasheet
pdf, 737 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
