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AUIRLR2905

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15 шт. со склада г.Москва

280 руб.

от 2 шт. — 220 руб.

от 10 шт. — 166 руб.

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Номенклатурный номер: 8002016225

Производитель: Infineon Technologies

Описание

Automotive N-Channel Power MOSFET, Infineon
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Технические параметры

Maximum Operating Temperature	+175 °C
Maximum Continuous Drain Current	42 A
Package Type	DPAK (TO-252)
Maximum Power Dissipation	110 W
Mounting Type	Surface Mount
Width	6.22mm
Height	2.39mm
Transistor Material	Si
Number of Elements per Chip	1
Length	6.73mm
Transistor Configuration	Single
Brand	Infineon
Series	HEXFET
Minimum Operating Temperature	-55 °C
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Drain Source Resistance	40 mΩ
Maximum Drain Source Voltage	55 V
Pin Count	3
Typical Gate Charge @ Vgs	48 nC @ 5 V
Channel Mode	Enhancement
Channel Type	N
Maximum Gate Source Voltage	-16 V, +16 V