FDC654P
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250 руб.
от 2 шт. —
190 руб.
Добавить в корзину 1 шт.
на сумму 250 руб.
Описание
Электроэлемент
P-Channel 30 V 75 mOhm Surface Mount Logic Level PowerTrench Mosfet SSOT-6
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single Quad Drain |
| Factory Pack Quantity | 3000 |
| Fall Time | 13 ns |
| Forward Transconductance - Min | 6 S |
| Height | 1.1 mm |
| Id - Continuous Drain Current | -3.6 A |
| Length | 2.9 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SSOT-6 |
| Packaging | Reel |
| Part # Aliases | FDC654P_NL |
| Pd - Power Dissipation | 1.6 W |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 75 mOhms |
| Rise Time | 13 ns |
| RoHS | Details |
| Series | FDC654P |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 11 ns |
| Typical Turn-On Delay Time | 6 ns |
| Unit Weight | 0.00127 oz |
| Vds - Drain-Source Breakdown Voltage | -30 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 1.6 mm |
| Channel Type | P |
| Maximum Continuous Drain Current | 3.6 A |
| Maximum Drain Source Resistance | 125 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Power Dissipation | 1.6 W |
| Minimum Gate Threshold Voltage | 1V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 6 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 6.2 nC @ 10 V |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 13 ns |
| Forward Transconductance - Min: | 6 S |
| Id - Continuous Drain Current: | 3.6 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SSOT-6 |
| Part # Aliases: | FDC654P_NL |
| Pd - Power Dissipation: | 1.6 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Qg - Gate Charge: | 9 nC |
| Rds On - Drain-Source Resistance: | 75 mOhms |
| Rise Time: | 13 ns |
| Series: | FDC654P |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 11 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 0.036 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
