FDG6321C
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см. техническую документацию
см. техническую документацию
140 руб.
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46.38 руб.
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Описание
Электроэлемент
Описание Транзистор N/P-MOSFET, полевой, 25/-25В, 0,5/0,41А, 0,3Вт, SC70-6 Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Dual |
| Factory Pack Quantity | 3000 |
| Fall Time | 8.5 ns, 8 ns |
| Forward Transconductance - Min | 1.45 S, 0.9 S |
| Height | 1.1 mm |
| Id - Continuous Drain Current | 500 mA, -410 mA |
| Length | 2 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | SOT-323-6 |
| Packaging | Cut Tape |
| Part # Aliases | FDG6321C_NL |
| Pd - Power Dissipation | 300 mW |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 450 mOhms |
| Rise Time | 8.5 ns, 8 ns |
| RoHS | Details |
| Series | FDG6321C |
| Technology | Si |
| Transistor Polarity | N-Channel, P-Channel |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Type | FET |
| Typical Turn-Off Delay Time | 17 ns, 55 ns |
| Typical Turn-On Delay Time | 3 ns, 7 ns |
| Unit Weight | 0.000988 oz |
| Vds - Drain-Source Breakdown Voltage | 25 V |
| Vgs - Gate-Source Voltage | 8 V |
| Width | 1.25 mm |
| Maximum Power Dissipation | 300 mW |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | SC-70 |
| Pin Count | 6 |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 8.5 ns, 8 ns |
| Forward Transconductance - Min: | 1.45 S, 0.9 S |
| Id - Continuous Drain Current: | 500 mA, 410 mA |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOT-323-6 |
| Part # Aliases: | FDG6321C_NL |
| Pd - Power Dissipation: | 300 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Qg - Gate Charge: | 1.64 nC, 1.1 nC |
| Rds On - Drain-Source Resistance: | 450 mOhms |
| Rise Time: | 8.5 ns, 8 ns |
| Series: | FDG6321C |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Type: | FET |
| Typical Turn-Off Delay Time: | 17 ns, 55 ns |
| Typical Turn-On Delay Time: | 3 ns, 7 ns |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Вес, г | 0.07 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
