MJE210G
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см. техническую документацию
см. техническую документацию
450 руб.
от 2 шт. —
360 руб.
от 5 шт. —
292 руб.
от 10 шт. —
268.38 руб.
Добавить в корзину 1 шт.
на сумму 450 руб.
Описание
Электроэлемент
TRANSISTOR, BIPOL, PNP, 40V, TO-225-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:65MHz; Power Dissipation Pd:15W; DC Collector Current:-5A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-225; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MJxxxx Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Технические параметры
| Category | Bipolar Power |
| Collector Current (DC) | 5(A) |
| Collector Current (DC) (Max) | 5 A |
| Collector-Base Voltage | 40(V) |
| Collector-Emitter Voltage | 25(V) |
| Configuration | Single |
| DC Current Gain | 70 |
| DC Current Gain (Min) | 70 |
| Emitter-Base Voltage | 8(V) |
| Frequency | 65(MHz) |
| Frequency (Max) | 65 MHz |
| Mounting | Through Hole |
| Number of Elements | 1 |
| Operating Temp Range | -65C to 150C |
| Operating Temperature Classification | Military |
| Output Power | Not Required(W) |
| Package Type | TO-225 |
| Packaging | Box |
| Pin Count | 3+Tab |
| Power Dissipation | 15(W) |
| Rad Hardened | No |
| Transistor Polarity | PNP |
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 40 V |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Collector-Emitter Saturation Voltage | 1.8 V |
| Continuous Collector Current | 5 A |
| DC Collector/Base Gain Hfe Min | 70 |
| Emitter- Base Voltage VEBO | 8 V |
| Factory Pack Quantity | 500 |
| Gain Bandwidth Product FT | 65 MHz |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 5 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | Through Hole |
| Package / Case | TO-225-3 |
| Pd - Power Dissipation | 15 W |
| Product Category | Bipolar Transistors-BJT |
| Product Type | BJTs-Bipolar Transistors |
| Series | MJE210 |
| Subcategory | Transistors |
| Maximum Collector Base Voltage | 25 V dc |
| Maximum Collector Emitter Voltage | -40 V |
| Maximum Emitter Base Voltage | 8 V dc |
| Maximum Operating Frequency | 10 MHz |
| Maximum Power Dissipation | 15 W |
| Minimum DC Current Gain | 45 |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Transistor Configuration | Single |
| Transistor Type | PNP |
| Вес, г | 0.68 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
