BD139-16S
420 руб.
от 2 шт. —
320 руб.
от 5 шт. —
251 руб.
от 10 шт. —
224.28 руб.
Добавить в корзину 1 шт.
на сумму 420 руб.
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Описание
Электроэлемент
TRANSISTOR, BIPOL, NPN, 80V, TO-126-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:1.25W; DC Collector Current:1.5A; DC Current Gain hFE:100hFE; Transistor Case Style:TO-126; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Collector- Base Voltage VCBO | 80 V |
| Collector- Emitter Voltage VCEO Max | 80 V |
| Collector-Emitter Saturation Voltage | 0.5 V |
| Configuration | Single |
| Continuous Collector Current | 1.5 A |
| DC Collector/Base Gain hfe Min | 40 |
| DC Current Gain hFE Max | 160 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 250 |
| Height | 1.5 mm |
| Length | 8 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 1.5 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Package / Case | TO-126-3 |
| Packaging | Bulk |
| Part # Aliases | BD13916S_NL |
| Pd - Power Dissipation | 12.5 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | BD139 |
| Transistor Polarity | NPN |
| Unit Weight | 0.026843 oz |
| Width | 3.25 mm |
| Automotive | No |
| Maximum Collector Base Voltage - (V) | 80 |
| Maximum Collector-Emitter Voltage - (V) | 80 |
| Maximum DC Collector Current - (A) | 1.5 |
| Maximum Emitter Base Voltage - (V) | 5 |
| Maximum Power Dissipation - (mW) | 1250 |
| Maximum Transition Frequency - (MHz) | -55~150 |
| Military | No |
| Minimum DC Current Gain | 25@5mA@2VI25@0.5A@2VI100@150mA@2V |
| Number of Elements per Chip | 1 |
| Pin Count | 3 |
| Supplier Package | TO-126 |
| Collector Current (Ic) | 1.5A |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 80V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@500mA, 50mA |
| DC Current Gain (hFE@Ic,Vce) | 100@150mA, 2V |
| Operating Temperature | - |
| Power Dissipation (Pd) | 1.25W |
| Transistor Type | NPN |
| Transition Frequency (fT) | - |
| Вес, г | 0.761 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
