NJD2873T4G, Биполярный транзистор, NPN, 50 В, 2 А
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Описание
Транзисторы / Биполярные транзисторы / Одиночные биполярные транзисторы
Биполярный транзистор, NPN, 50 В, 2 А
Технические параметры
| Корпус | DPAK-3 | |
| EU RoHS | Compliant with Exemption | |
| ECCN (US) | EAR99 | |
| Part Status | Active | |
| HTS | 8541.29.00.95 | |
| Type | NPN | |
| Product Category | Bipolar Power | |
| Material | Si | |
| Configuration | Single | |
| Number of Elements per Chip | 1 | |
| Maximum Collector Base Voltage (V) | 50 | |
| Maximum Collector-Emitter Voltage (V) | 50 | |
| Maximum Emitter Base Voltage (V) | 5 | |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@0.05A@1A | |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@0.05A@1A | |
| Maximum DC Collector Current (A) | 2 | |
| Minimum DC Current Gain | 120@0.5A@2V|40@2A@2V | |
| Maximum Power Dissipation (mW) | 1680 | |
| Maximum Transition Frequency (MHz) | 65(Min) | |
| Minimum Operating Temperature (°C) | -65 | |
| Maximum Operating Temperature (°C) | 175 | |
| Packaging | Tape and Reel | |
| Automotive | No | |
| Standard Package Name | TO-252 | |
| Pin Count | 3 | |
| Supplier Package | DPAK | |
| Military | No | |
| Mounting | Surface Mount | |
| Package Height | 2.38(Max) | |
| Package Length | 6.73(Max) | |
| Package Width | 6.22(Max) | |
| PCB changed | 2 | |
| Tab | Tab | |
| Lead Shape | Gull-wing | |
| Brand | ON Semiconductor | |
| Collector- Base Voltage VCBO | 50 V | |
| Collector- Emitter Voltage VCEO Max | 50 V | |
| Collector-Emitter Saturation Voltage | 0.3 V | |
| Continuous Collector Current | 2 A | |
| DC Collector/Base Gain Hfe Min | 120 | |
| Emitter- Base Voltage VEBO | 5 V | |
| Factory Pack Quantity | 2500 | |
| Gain Bandwidth Product FT | 65 MHz | |
| Manufacturer | ON Semiconductor | |
| Maximum DC Collector Current | 2 A | |
| Maximum Operating Temperature | +150 C | |
| Minimum Operating Temperature | -65 C | |
| Mounting Style | SMD/SMT | |
| Package / Case | TO-252-3 | |
| Pd - Power Dissipation | 15 W | |
| Product Type | BJTs-Bipolar Transistors | |
| Series | NJD2873 | |
| Subcategory | Transistors | |
| Transistor Polarity | NPN | |
| Maximum Collector Base Voltage | 50 V dc | |
| Maximum Collector Emitter Voltage | 50 V | |
| Maximum Emitter Base Voltage | 5 V | |
| Maximum Operating Frequency | 10 MHz | |
| Maximum Power Dissipation | 15 W | |
| Mounting Type | Surface Mount | |
| Package Type | DPAK(TO-252) | |
| Transistor Configuration | Single | |
| Transistor Type | NPN | |
| Вес, г | 5 |
Техническая документация
Datasheet
pdf, 66 КБ
Datasheet
pdf, 1680 КБ
Datasheet NJD2873T4G
pdf, 110 КБ
Datasheet NJD2873T4G
pdf, 68 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
