55GN01CA-TB-E, RF Bipolar Transistors SWITCHING DEVICE

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120 руб.

от 10 шт. — 79 руб.

от 100 шт. — 34 руб.

от 1000 шт. — 24.58 руб.

Добавить в корзину 1 шт. на сумму 120 руб.

Номенклатурный номер: 8004651330

Артикул: 55GN01CA-TB-E

Semiconductors\Discrete Semiconductors\Transistors\RF Transistors

Brand:	onsemi
Collector- Base Voltage VCBO:	20 V
Collector- Emitter Voltage VCEO Max:	10 V
Configuration:	Single
Continuous Collector Current:	5 mA
DC Collector/Base Gain hfe Min:	100
DC Current Gain hFE Max:	180
Emitter- Base Voltage VEBO:	3 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	4.5 GHz
Manufacturer:	onsemi
Maximum DC Collector Current:	70 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	+25 C
Mounting Style:	SMD/SMT
Operating Frequency:	5.5 GHz
Operating Temperature Range:	+25 C to+150 C
Package / Case:	CP-3
Pd - Power Dissipation:	200 mW
Product Category:	RF Bipolar Transistors
Product Type:	RF Bipolar Transistors
Series:	55GN01CA
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Transistor Type:	Bipolar Power
Type:	RF Bipolar Power
Вес, г	0.01

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