BSZ0804LSATMA1, N-Channel MOSFET, 40 A, 100 V, 8-Pin TSDSON-8 FL BSZ0804LSATMA1

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600 руб.

Кратность заказа 5 шт.

от 125 шт. — 414 руб.

Добавить в корзину 5 шт. на сумму 3 000 руб.

Номенклатурный номер: 8014578650

Артикул: BSZ0804LSATMA1

Semiconductors\Discrete Semiconductors\MOSFETs

The Infineon OptiMOS™ PD N-channel power MOSFET targets USB-PD and adapter applications. The product offers fast ramp-up and optimized lead times.

Channel Type	N
Maximum Continuous Drain Current	40 A
Maximum Drain Source Voltage	100 V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	TSDSON-8 FL
Pin Count	8
Brand:	Infineon Technologies
Channel Mode:	Enhancement
Factory Pack Quantity: Factory Pack Quantity:	5000
Fall Time:	5.3 ns
Forward Transconductance - Min:	22 S
Id - Continuous Drain Current:	40 A
Manufacturer:	Infineon
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TSDSON-8
Part # Aliases:	BSZ0804LS SP001648318
Pd - Power Dissipation:	69 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	22 nC
Rds On - Drain-Source Resistance:	10.5 mOhms
Rise Time:	4.6 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	5.7 ns
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.7 V
Вес, г	1