SIHP11N80E-GE3, MOSFET 800V Vds 30V Vgs TO-220AB

SIHP11N80E-GE3, MOSFET 800V Vds 30V Vgs TO-220AB
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Номенклатурный номер: 8005290033
Артикул: SIHP11N80E-GE3

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET
E Series High Voltage MOSFETs Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific on-resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low on-resistance (RDS(ON)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). E series MOSFETs are available in 800VDS high-voltage variants with drain current (ID) that ranges from 2.8A to 17.4A. Also, new Vishay Siliconix 600V E Series MOSFETs have been added to the PowerPAK® 8x8 surface mount package. Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Технические параметры

Brand: Vishay/Siliconix
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: 1000
Fall Time: 18 ns
Id - Continuous Drain Current: 12 A
Manufacturer: Vishay
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Number of Channels: 1 Channel
Package/Case: TO-220-3
Packaging: Tube
Part # Aliases: SIHP11N80E-BE3
Pd - Power Dissipation: 179 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 88 nC
Rds On - Drain-Source Resistance: 380 mOhms
Rise Time: 15 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 55 ns
Typical Turn-On Delay Time: 18 ns
Vds - Drain-Source Breakdown Voltage: 800 V
Vgs - Gate-Source Voltage: -30 V, +30 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Вес, г 2

Техническая документация

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов