BSS123
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см. техническую документацию
см. техническую документацию
110 руб.
Мин. кол-во для заказа 2 шт.
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53 руб.
от 10 шт. —
36 руб.
от 100 шт. —
20.54 руб.
Добавить в корзину 2 шт.
на сумму 220 руб.
Альтернативные предложения1
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Описание
Электроэлемент
MOSFET, N, 100V, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:170mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Diss
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 9 ns |
| Forward Transconductance - Min | 0.8 S |
| Height | 1.2 mm |
| Id - Continuous Drain Current | 170 mA |
| Length | 2.9 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Part # Aliases | BSS123_NL |
| Pd - Power Dissipation | 360 mW |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 6 Ohms |
| Rise Time | 9 ns |
| RoHS | Details |
| Series | BSS123 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | FET |
| Typical Turn-Off Delay Time | 17 ns |
| Typical Turn-On Delay Time | 1.7 ns |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 1.3 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 170 mA |
| Maximum Drain Source Resistance | 6 Ω |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 360 mW |
| Minimum Gate Threshold Voltage | 0.8V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 1.8 nC @ 10 V |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 9 ns |
| Forward Transconductance - Min: | 0.8 S |
| Id - Continuous Drain Current: | 170 mA |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOT-23-3 |
| Part # Aliases: | BSS123_NL |
| Pd - Power Dissipation: | 300 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Qg - Gate Charge: | 2.5 nC |
| Rds On - Drain-Source Resistance: | 6 Ohms |
| Rise Time: | 9 ns |
| Series: | BSS123 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | FET |
| Typical Turn-Off Delay Time: | 17 ns |
| Typical Turn-On Delay Time: | 1.7 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Вес, г | 0.05 |
Техническая документация
BSS123
pdf, 145 КБ
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 195 КБ
Документация
pdf, 271 КБ
BSS123
pdf, 177 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
