IRFHS9351TRPBF
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
72 руб.
Мин. кол-во для заказа 5 шт.
Добавить в корзину 5 шт.
на сумму 360 руб.
Описание
Power MOSFETs
Infineon pioneered HEXFET power MOSFET technology, developing and introducing the first hexagonal topology MOSFETs in 1979. These developments were granted a broad patent just four years later, and since that time, most MOSFET manufacturers have licensed the designs and processes to enter this marketplace. IR products exhibit the lowest MOSFET on-resistance available on the market for similar components in their class, enabling power conversion subsystem designs that exhibit unequaled efficiency. IR combines state-of-the-art silicon technology with innovative packaging technology. IR POWIRTAB™, Super-220™ and Super-247™ packages allow up to 20A more current per device in the same footprint than standard packages, increasing power density. Compatible with standard surface-mount soldering techniques, IR's FlipFET® packaging technology offers a 100% silicon to footprint ratio with the same performance as a conventional package 3 times as big making it the ideal solution for portable devices such as portable phones or notebook PCs. IR's DirectFET® packaging revolutionizes thermal management in the footprint of a standard SO-8 by drawing heat away from the board through the top of the package. As a result, DirectFET MOSFETs can double current density while cutting thermal management cost in half in high current circuits that power next generation microprocessors.
Infineon pioneered HEXFET power MOSFET technology, developing and introducing the first hexagonal topology MOSFETs in 1979. These developments were granted a broad patent just four years later, and since that time, most MOSFET manufacturers have licensed the designs and processes to enter this marketplace. IR products exhibit the lowest MOSFET on-resistance available on the market for similar components in their class, enabling power conversion subsystem designs that exhibit unequaled efficiency. IR combines state-of-the-art silicon technology with innovative packaging technology. IR POWIRTAB™, Super-220™ and Super-247™ packages allow up to 20A more current per device in the same footprint than standard packages, increasing power density. Compatible with standard surface-mount soldering techniques, IR's FlipFET® packaging technology offers a 100% silicon to footprint ratio with the same performance as a conventional package 3 times as big making it the ideal solution for portable devices such as portable phones or notebook PCs. IR's DirectFET® packaging revolutionizes thermal management in the footprint of a standard SO-8 by drawing heat away from the board through the top of the package. As a result, DirectFET MOSFETs can double current density while cutting thermal management cost in half in high current circuits that power next generation microprocessors.
Технические параметры
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: Factory Pack Quantity: | 4000 |
Id - Continuous Drain Current: | 2.3 A |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package/Case: | PQFN-6 |
Part # Aliases: | IRFHS9351TRPBF SP001575834 |
Pd - Power Dissipation: | 1.4 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 1.9 nC |
Rds On - Drain-Source Resistance: | 170 mOhms |
Series: | Dual P-Channel |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | StrongIRFET |
Transistor Polarity: | P-Channel |
Transistor Type: | 2 P-Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.4 V |
Channel Type | N |
Maximum Continuous Drain Current | 2.3 A |
Maximum Drain Source Voltage | 30 V |
Mounting Type | Through Hole |
Package Type | PQFN 2mm x 2mm |
Вес, г | 0.24 |
Техническая документация
Datasheet
pdf, 281 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов