BSP170PH6327XTSA1, Транзистор полевой P-канальный 60В 1.9А 1,8Вт

Изображения служат только для ознакомления,
см. техническую документацию

140 руб.

Мин. кол-во для заказа 4 шт.

от 20 шт. — 120 руб.

от 39 шт. — 105 руб.

от 78 шт. — 100 руб.

Добавить в корзину 4 шт. на сумму 560 руб.

Номенклатурный номер: 8029037648

Артикул: BSP170PH6327XTSA1

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы

Транзистор полевой P-канальный 60В 1.9А 1,8Вт

Корпус	SOT-223
Brand:	Infineon Technologies
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	60 ns
Forward Transconductance - Min:	1.3 S
Id - Continuous Drain Current:	1.9 A
Manufacturer:	Infineon
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-223-4
Part # Aliases:	BSP170P H6327 SP001058608
Pd - Power Dissipation:	1.8 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	10 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	239 mOhms
Rise Time:	28 ns
Series:	BSP170
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	92 ns
Typical Turn-On Delay Time:	14 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.1 V
Channel Mode	Enhancement
Channel Type	P
Maximum Continuous Drain Current	1.9 A
Maximum Drain Source Resistance	300 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	1.8 W
Minimum Gate Threshold Voltage	2.1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-223
Pin Count	3
Series	SIPMOS
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	10 nC @ 10 V
Width	3.5mm
Вес, г	0.85