FCH041N65EF-F155, MOSFET 700V NChnl SuperFET II FRFET MOSFET
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
SuperFET® II Power MOSFETsonsemi SuperFET® II Power MOSFETs are a high voltage MOSFET family utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SuperFET II MOSFETs are suitable for various AC-DC power conversion in switching mode operation for system miniaturization and high efficiency.
Технические параметры
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Id - Continuous Drain Current: | 76 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | FCH041N65EF_F155 |
| Pd - Power Dissipation: | 595 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 229 nC |
| Rds On - Drain-Source Resistance: | 41 mOhms |
| Series: | FCH041N65EF |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | SuperFET, FRFET |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 76 |
| Maximum Drain Source Resistance (mOhm) | 41@10V |
| Maximum Drain Source Voltage (V) | 650 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum IDSS (uA) | 10 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 595000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Packaging | Tube |
| Part Status | NRND |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | SuperFET II |
| Product Category | Power MOSFET |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| Tab | Tab |
| Typical Fall Time (ns) | 48 |
| Typical Gate Charge @ 10V (nC) | 229 |
| Typical Gate Charge @ Vgs (nC) | 229@10V |
| Typical Input Capacitance @ Vds (pF) | 9446@100V |
| Typical Rise Time (ns) | 65 |
| Typical Turn-Off Delay Time (ns) | 175 |
| Typical Turn-On Delay Time (ns) | 55 |
| Вес, г | 38 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
