FCH150N65F-F155, Силовой МОП-транзистор, N Канал, 650 В, 24 А, 0.133 Ом, TO-247, Through Hole
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Описание
SuperFET® II Power MOSFETs
onsemi SuperFET® II Power MOSFETs are a high voltage MOSFET family utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SuperFET II MOSFETs are suitable for various AC-DC power conversion in switching mode operation for system miniaturization and high efficiency.
onsemi SuperFET® II Power MOSFETs are a high voltage MOSFET family utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SuperFET II MOSFETs are suitable for various AC-DC power conversion in switching mode operation for system miniaturization and high efficiency.
Технические параметры
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Fall Time: | 6 ns |
| Forward Transconductance - Min: | 22 S |
| Id - Continuous Drain Current: | 24 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | FCH150N65F_F155 |
| Pd - Power Dissipation: | 298 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 72 nC |
| Rds On - Drain-Source Resistance: | 150 mOhms |
| REACH - SVHC: | Details |
| Rise Time: | 15 ns |
| Series: | FCH150N65F_F155 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | SuperFET II FRFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 73 ns |
| Typical Turn-On Delay Time: | 28 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Вес, г | 0.01 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
