FDN335N, Транзистор полевой N-канальный 20В 1.7А 0.5Вт
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой N-канальный 20В 1.7А 0.5Вт
Технические параметры
| Корпус | 3-SSOT | |
| Brand: | onsemi/Fairchild | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 | |
| Fall Time: | 8.5 ns | |
| Forward Transconductance - Min: | 7 S | |
| Id - Continuous Drain Current: | 1.7 A | |
| Manufacturer: | onsemi | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package / Case: | SSOT-3 | |
| Part # Aliases: | FDN335N_NL | |
| Pd - Power Dissipation: | 500 mW | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Product: | MOSFET Small Signal | |
| Qg - Gate Charge: | 5 nC | |
| Rds On - Drain-Source Resistance: | 55 mOhms | |
| Rise Time: | 8.5 ns | |
| Series: | FDN335N | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Tradename: | PowerTrench | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Type: | MOSFET | |
| Typical Turn-Off Delay Time: | 11 ns | |
| Typical Turn-On Delay Time: | 5 ns | |
| Vds - Drain-Source Breakdown Voltage: | 20 V | |
| Vgs - Gate-Source Voltage: | -8 V, +8 V | |
| Vgs th - Gate-Source Threshold Voltage: | 400 mV | |
| Current - Continuous Drain (Id) @ 25В°C | 1.7A(Ta) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| FET Feature | - | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 10V | |
| Manufacturer | ON Semiconductor | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -55В°C ~ 150В°C(TJ) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Packaging | Digi-ReelВ® | |
| Part Status | Active | |
| Power Dissipation (Max) | 500mW(Ta) | |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 1.7A, 4.5V | |
| Series | PowerTrenchВ® | |
| Supplier Device Package | SuperSOT-3 | |
| Technology | MOSFET(Metal Oxide) | |
| Vgs (Max) | В±8V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250ВµA | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.7 A | |
| Maximum Drain Source Resistance | 70 mΩ | |
| Maximum Drain Source Voltage | 20 V | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Maximum Operating Temperature | +150 °C | |
| Maximum Power Dissipation | 500 mW | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Minimum Operating Temperature | -55 °C | |
| Number of Elements per Chip | 1 | |
| Package Type | SOT-23 | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 3.5 nC @ 4.5 V | |
| Width | 1.4mm | |
| Вес, г | 0.02 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 242 КБ
Datasheet
pdf, 81 КБ
FDN335N
pdf, 206 КБ
Документация
pdf, 193 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
