FQA46N15
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1 130 руб.
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1 000 руб.
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909 руб.
от 10 шт. —
866.25 руб.
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Описание
Электроэлемент
MOSFET, N CH, 150V, 50A, TO-3PN; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:250W; Transistor Case Style:TO-3PN; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Operating Temperature Min:-55°C
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 30 |
| Fall Time | 200 ns |
| Forward Transconductance - Min | 36 S |
| Height | 20.1 mm |
| Id - Continuous Drain Current | 50 A |
| Length | 16.2 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-3PN-3 |
| Packaging | Tube |
| Part # Aliases | FQA46N15_NL |
| Pd - Power Dissipation | 250 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 42 mOhms |
| Rise Time | 320 ns |
| RoHS | Details |
| Series | FQA46N15 |
| Technology | Si |
| Tradename | QFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 210 ns |
| Typical Turn-On Delay Time | 35 ns |
| Unit Weight | 0.225789 oz |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Vgs - Gate-Source Voltage | 25 V |
| Width | 5 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 50 A |
| Maximum Drain Source Resistance | 42 mΩ |
| Maximum Drain Source Voltage | 150 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Power Dissipation | 250 W |
| Minimum Gate Threshold Voltage | 2V |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-3PN |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 85 nC @ 10 V |
| Вес, г | 7.5 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
