NDS332P, Транзистор полевой P-канальный 20В 1А 0.5Вт
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
35 руб.
Мин. кол-во для заказа 14 шт.
от 41 шт. —
30 руб.
от 82 шт. —
28 руб.
от 164 шт. —
26 руб.
Добавить в корзину 14 шт.
на сумму 490 руб.
Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой P-канальный 20В 1А 0.5Вт
Технические параметры
| Корпус | 3-SSOT | |
| Brand: | onsemi/Fairchild | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 | |
| Fall Time: | 30 ns | |
| Id - Continuous Drain Current: | 1 A | |
| Manufacturer: | onsemi | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package/Case: | SSOT-3 | |
| Part # Aliases: | NDS332P_NL | |
| Pd - Power Dissipation: | 500 mW | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Product: | MOSFET Small Signal | |
| Qg - Gate Charge: | 5 nC | |
| Rds On - Drain-Source Resistance: | 350 mOhms | |
| Rise Time: | 30 ns | |
| Series: | NDS332P | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Transistor Polarity: | P-Channel | |
| Transistor Type: | 1 P-Channel | |
| Type: | MOSFET | |
| Typical Turn-Off Delay Time: | 25 ns | |
| Typical Turn-On Delay Time: | 8 ns | |
| Vds - Drain-Source Breakdown Voltage: | 20 V | |
| Vgs - Gate-Source Voltage: | -8 V, +8 V | |
| Vgs th - Gate-Source Threshold Voltage: | 1 V | |
| Brand | ON Semiconductor/Fairchild | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Factory Pack Quantity | 3000 | |
| Fall Time | 30 ns | |
| Height | 1.12 mm | |
| Id - Continuous Drain Current | -1 A | |
| Length | 2.9 mm | |
| Manufacturer | ON Semiconductor | |
| Maximum Operating Temperature | +150 C | |
| Minimum Operating Temperature | -55 C | |
| Mounting Style | SMD/SMT | |
| Number of Channels | 1 Channel | |
| Package / Case | SSOT-3 | |
| Packaging | Reel | |
| Part # Aliases | NDS332P_NL | |
| Pd - Power Dissipation | 500 mW(1/2 W) | |
| Product | MOSFET Small Signal | |
| Product Category | MOSFET | |
| Rds On - Drain-Source Resistance | 350 mOhms | |
| Rise Time | 30 ns | |
| RoHS | Details | |
| Series | NDS332P | |
| Technology | Si | |
| Transistor Polarity | P-Channel | |
| Transistor Type | 1 P-Channel | |
| Type | MOSFET | |
| Typical Turn-Off Delay Time | 25 ns | |
| Typical Turn-On Delay Time | 8 ns | |
| Unit Weight | 0.00127 oz | |
| Vds - Drain-Source Breakdown Voltage | -20 V | |
| Vgs - Gate-Source Voltage | 8 V | |
| Width | 1.4 mm | |
| Вес, г | 0.05 |
Техническая документация
Datasheet
pdf, 444 КБ
Документация
pdf, 379 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
