STD3NK50ZT4, Транзистор полевой N-канальный 500В 2.3A
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см. техническую документацию
1000 шт. со склада г.Москва, срок 12 дней
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой N-канальный 500В 2.3A
Технические параметры
| Корпус | DPAK/TO-252AA | |
| Automotive | No | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Single | |
| ECCN (US) | EAR99 | |
| EU RoHS | Compliant with Exemption | |
| Lead Shape | Gull-wing | |
| Maximum Continuous Drain Current (A) | 2.3 | |
| Maximum Drain Source Resistance (mOhm) | 3300 10V | |
| Maximum Drain Source Voltage (V) | 500 | |
| Maximum Gate Source Voltage (V) | ±30 | |
| Maximum Operating Temperature (°C) | 150 | |
| Maximum Power Dissipation (mW) | 45000 | |
| Minimum Operating Temperature (°C) | -55 | |
| Mounting | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Packaging | Tape and Reel | |
| Part Status | Active | |
| PCB changed | 2 | |
| Pin Count | 3 | |
| PPAP | No | |
| Product Category | Power MOSFET | |
| Standard Package Name | TO-252 | |
| Supplier Package | DPAK | |
| Tab | Tab | |
| Typical Fall Time (ns) | 14 | |
| Typical Gate Charge @ 10V (nC) | 11 | |
| Typical Gate Charge @ Vgs (nC) | 11 10V | |
| Typical Input Capacitance @ Vds (pF) | 280 25V | |
| Typical Rise Time (ns) | 13 | |
| Typical Turn-Off Delay Time (ns) | 24 | |
| Typical Turn-On Delay Time (ns) | 8 | |
| Maximum Continuous Drain Current | 2.3 A | |
| Maximum Drain Source Resistance | 3.3 Ω | |
| Maximum Drain Source Voltage | 500 V | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Maximum Operating Temperature | +150 °C | |
| Maximum Power Dissipation | 45 W | |
| Minimum Gate Threshold Voltage | 3V | |
| Minimum Operating Temperature | -55 °C | |
| Mounting Type | Surface Mount | |
| Package Type | DPAK(TO-252) | |
| Series | MDmesh, SuperMESH | |
| Transistor Configuration | Single | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V | |
| Width | 6.2mm | |
| Brand: | STMicroelectronics | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 | |
| Fall Time: | 14 ns | |
| Forward Transconductance - Min: | 1.5 S | |
| Id - Continuous Drain Current: | 2.3 A | |
| Manufacturer: | STMicroelectronics | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package / Case: | TO-252-3 | |
| Pd - Power Dissipation: | 45 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 11 nC | |
| Rds On - Drain-Source Resistance: | 2.8 Ohms | |
| Rise Time: | 13 ns | |
| Series: | STD3NK50ZT4 | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Type: | MOSFET | |
| Typical Turn-Off Delay Time: | 24 ns | |
| Typical Turn-On Delay Time: | 8 ns | |
| Vds - Drain-Source Breakdown Voltage: | 500 V | |
| Vgs - Gate-Source Voltage: | -30 V, +30 V | |
| Vgs th - Gate-Source Threshold Voltage: | 3 V | |
| Вес, г | 0.66 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 477 КБ
Datasheet
pdf, 501 КБ
Datasheet STD3NK50ZT4
pdf, 527 КБ
Datasheet STD3NK50ZT4
pdf, 431 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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