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STD3NK100Z, Trans MOSFET N-CH 1KV 2.5A 3-Pin(2+Tab) DPAK T/R

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10000 шт., срок 5-7 недель

230 руб.

Кратность заказа 2500 шт.

от 5000 шт. — 220 руб.

от 10000 шт. — 217 руб.

Добавить в корзину 2500 шт. на сумму 575 000 руб.

Альтернативные предложения2

Номенклатурный номер: 8001476432

Артикул: STD3NK100Z

Бренд: STMicroelectronics

Описание

Diodes, Transistors and Thyristors\FET Transistors\MOSFETs

Описание Транзистор N-МОП, полевой, 1KВ 2.5A DPAK Характеристики

Категория	Транзистор
Тип	БТИЗ
Вид	IGBT

Технические параметры

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	2.5
Maximum Diode Forward Voltage (V)	1.6
Maximum Drain Source Resistance (mOhm)	6000@10V
Maximum Drain Source Voltage (V)	1000
Maximum Gate Source Leakage Current (nA)	10000
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	4.5
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	30
Maximum Power Dissipation (mW)	90000
Maximum Pulsed Drain Current @ TC=25°C (A)	10
Minimum Gate Threshold Voltage (V)	3
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Operating Junction Temperature (°C)	-55 to 150
Packaging	Tape and Reel
Part Status	Active
PCB changed	2
Pin Count	3
PPAP	No
Process Technology	SuperMESH
Product Category	Power MOSFET
Standard Package Name	TO-252
Supplier Package	DPAK
Supplier Temperature Grade	Industrial
Tab	Tab
Typical Drain Source Resistance @ 25°C (mOhm)	5400@10V
Typical Fall Time (ns)	32
Typical Gate Charge @ 10V (nC)	18
Typical Gate Charge @ Vgs (nC)	18@10V
Typical Gate Plateau Voltage (V)	6
Typical Gate Threshold Voltage (V)	3.75
Typical Gate to Drain Charge (nC)	9.2
Typical Gate to Source Charge (nC)	3.6
Typical Input Capacitance @ Vds (pF)	601@25V
Typical Output Capacitance (pF)	53
Typical Reverse Recovery Charge (nC)	2500
Typical Reverse Recovery Time (ns)	628
Typical Reverse Transfer Capacitance @ Vds (pF)	12@25V
Typical Rise Time (ns)	7.5
Typical Turn-Off Delay Time (ns)	39
Typical Turn-On Delay Time (ns)	15
Brand	STMicroelectronics
Factory Pack Quantity	2500
Fall Time	32 ns
Height	2.4 mm
Id - Continuous Drain Current	2.5 A
Length	6.6 mm
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-252-3
Pd - Power Dissipation	90 W
Qg - Gate Charge	18 nC
Rds On - Drain-Source Resistance	6 Ohms
Rise Time	7.5 ns
RoHS	Details
Series	N-channel MDmesh
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	39 ns
Typical Turn-On Delay Time	15 ns
Vds - Drain-Source Breakdown Voltage	1000 V
Vgs - Gate-Source Voltage	30 V
Width	6.2 mm
Вес, г	1