Категория	Транзистор
Тип	полевой
Вид	MOSFET

Корпус	to220ab
кол-во в упаковке	50
Base Product Number	STP14 ->
Current - Continuous Drain (Id) @ 25В°C	14A (Tc)
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	92nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Other Related Documents	http://www.st.com/web/catalog/sense_power/FM100/CL
Package	Tube
Package / Case	TO-220-3
Power Dissipation (Max)	150W (Tc)
Rds On (Max) @ Id, Vgs	380mOhm @ 6A, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Series	SuperMESHв„ў ->
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±30V
Vgs(th) (Max) @ Id	4.5V @ 100ВµA
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	14
Maximum Drain Source Resistance (mOhm)	380 10V
Maximum Drain Source Voltage (V)	500
Maximum Gate Source Voltage (V)	±30
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	150000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Number of Elements per Chip	1
Packaging	Tube
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Product Category	Power MOSFET
Standard Package Name	TO-220
Supplier Package	TO-220AB
Tab	Tab
Typical Fall Time (ns)	12
Typical Gate Charge @ 10V (nC)	69
Typical Gate Charge @ Vgs (nC)	69 10V
Typical Input Capacitance @ Vds (pF)	2000 25V
Typical Rise Time (ns)	16
Typical Turn-Off Delay Time (ns)	54
Typical Turn-On Delay Time (ns)	24
Maximum Continuous Drain Current	14 A
Maximum Drain Source Resistance	380 mΩ
Maximum Drain Source Voltage	500 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	4.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	150 W
Minimum Gate Threshold Voltage	3V
Minimum Operating Temperature	-55 °C
Package Type	TO-220
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	69 nC @ 10 V
Width	4.6mm
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	12 ns
Forward Transconductance - Min:	12 S
Id - Continuous Drain Current:	14 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	150 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	69 nC
Rds On - Drain-Source Resistance:	380 mOhms
Rise Time:	16 ns
Series:	STP14NK50Z
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	54 ns
Typical Turn-On Delay Time:	24 ns
Vds - Drain-Source Breakdown Voltage:	500 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	3.5

STP14NK50Z

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