STD16NF06T4
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см. техническую документацию
см. техническую документацию
11 шт. со склада г.Москва, срок 9-10 дней
280 руб.
от 2 шт. —
220 руб.
от 10 шт. —
171 руб.
Добавить в корзину 1 шт.
на сумму 280 руб.
Альтернативные предложения2
Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 60В, 11А, 40Вт, DPAK Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Brand | STMicroelectronics |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 2500 |
Fall Time | 5.5 ns |
Height | 2.4 mm |
Id - Continuous Drain Current | 16 A |
Length | 6.6 mm |
Manufacturer | STMicroelectronics |
Maximum Operating Temperature | +175 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TO-252-3 |
Packaging | Reel |
Pd - Power Dissipation | 40 W |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 70 mOhms |
Rise Time | 15 ns |
RoHS | Details |
Series | STD16NF06 |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 16 ns |
Typical Turn-On Delay Time | 4 ns |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs - Gate-Source Voltage | 20 V |
Width | 6.2 mm |
Channel Type | N |
Maximum Continuous Drain Current | 16 A |
Maximum Drain Source Resistance | 70 mΩ |
Maximum Drain Source Voltage | 60 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Power Dissipation | 40 W |
Minimum Gate Threshold Voltage | 2V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | DPAK(TO-252) |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 14.1 nC @ 10 V |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 5.5 ns |
Id - Continuous Drain Current: | 16 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TO-252-3 |
Pd - Power Dissipation: | 40 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 14.1 nC |
Rds On - Drain-Source Resistance: | 70 mOhms |
Rise Time: | 15 ns |
Series: | STD16NF06 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | STripFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 16 ns |
Typical Turn-On Delay Time: | 4 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Вес, г | 0.6 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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