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STD6N80K5

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7 шт. со склада г.Москва, срок 6-9 дней

710 руб.

от 2 шт. — 600 руб.

от 5 шт. — 521 руб.

Добавить в корзину 1 шт. на сумму 710 руб.

Альтернативные предложения2

Номенклатурный номер: 8001940303

Бренд: STMicroelectronics

Описание

Электроэлемент

MOSFET, N-CH, 800V, 4.5A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:85W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh K5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)

Технические параметры

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	4.5 A
Maximum Drain Source Voltage	800 V
Maximum Gate Source Voltage	30 V
Mounting	Surface Mount
Operating Temperature	-55 to 150 ?C
Package	3DPAK
Packaging	Tape & Reel
Rad Hard	No
RDS-on	1.6@10V Ohm
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	2500
Id - Continuous Drain Current:	4.5 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	DPAK-3(TO-252-3)
Pd - Power Dissipation:	110 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	7.5 nC
Rds On - Drain-Source Resistance:	1.6 Ohms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Вес, г	0.382