STD12N50M2
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3 шт. со склада г.Москва, срок 6-7 дней
540 руб.
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Описание
Электроэлемент
MOSFET N-channel 500 V, 0.325 Ohm typ 10 A MDmesh M2 Power MOSFET
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 10(A) |
| Drain-Source On-Volt | 500(V) |
| Gate-Source Voltage (Max) | ±30(V) |
| Mounting | Surface Mount |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Package Type | DPAK |
| Packaging | Tape and Reel |
| Pin Count | 2+Tab |
| Polarity | N |
| Power Dissipation | 85(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 34.5 ns |
| Id - Continuous Drain Current: | 10 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Pd - Power Dissipation: | 85 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Rds On - Drain-Source Resistance: | 325 mOhms |
| Rise Time: | 10.5 ns |
| Series: | STD12N50M2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 8 ns |
| Typical Turn-On Delay Time: | 13.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Automotive | No |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 10 |
| Maximum Drain Source Resistance (mOhm) | 380@10V |
| Maximum Drain Source Voltage (V) | 500 |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 85000 |
| Minimum Operating Temperature (°C) | -55 |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 2 |
| PPAP | No |
| Process Technology | MDmesh M2 |
| Product Category | Power MOSFET |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 34.5 |
| Typical Gate Charge @ 10V (nC) | 15 |
| Typical Gate Charge @ Vgs (nC) | 15@10V |
| Typical Input Capacitance @ Vds (pF) | 550@100V |
| Typical Rise Time (ns) | 10.5 |
| Typical Turn-Off Delay Time (ns) | 8 |
| Typical Turn-On Delay Time (ns) | 13.5 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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