STP7N105K5

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2 шт. со склада г.Москва, срок 6-7 дней

950 руб.

от 2 шт. — 830 руб.

Добавить в корзину 1 шт. на сумму 950 руб.

Альтернативные предложения1

Номенклатурный номер: 8001942053

Электроэлемент

N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFETs in TO-220 package

Current - Continuous Drain (Id) @ 25В°C	4A(Tc)
Drain to Source Voltage (Vdss)	1050V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	380pF @ 100V
Manufacturer	STMicroelectronics
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-220-3
Packaging	Tube
Part Status	Active
Power Dissipation (Max)	110W(Tc)
Rds On (Max) @ Id, Vgs	2 Ohm @ 2A, 10V
Series	SuperMESH5в(ў
Standard Package	50
Supplier Device Package	TO-220
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±30V
Vgs(th) (Max) @ Id	5V @ 100ВµA
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	25 ns
Id - Continuous Drain Current:	4 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	110 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	17 nC
Rds On - Drain-Source Resistance:	2 Ohms
Rise Time:	7 ns
Series:	STP7N105K5
Subcategory:	MOSFETs
Technology:	Si
Tradename:	SuperMESH
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	43 ns
Typical Turn-On Delay Time:	17.5 ns
Vds - Drain-Source Breakdown Voltage:	1.05 kV
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Вес, г	2