STL7N6LF3
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см. техническую документацию
см. техническую документацию
10 шт. со склада г.Москва, срок 8-9 дней
760 руб.
от 2 шт. —
680 руб.
от 10 шт. —
620 руб.
Добавить в корзину 1 шт.
на сумму 760 руб.
Альтернативные предложения2
Описание
Электроэлемент
MOSFET, AEC-Q101, N-CH, 60V, POWERLAT; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 3000 |
| Fall Time | 5.4 ns |
| Id - Continuous Drain Current | 20 A |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | PowerFLAT-5x6-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 52 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 8.7 nC |
| Rds On - Drain-Source Resistance | 35 mOhms |
| Rise Time | 10.4 ns |
| RoHS | Details |
| Series | N-channel STripFET |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 32.4 ns |
| Typical Turn-On Delay Time | 6.7 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 5.4 ns |
| Id - Continuous Drain Current: | 20 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | PowerFLAT-5x6-8 |
| Pd - Power Dissipation: | 52 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 8.7 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 35 mOhms |
| Rise Time: | 10.4 ns |
| Series: | STL7N6LF3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 32.4 ns |
| Typical Turn-On Delay Time: | 6.7 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
Техническая документация
Datasheet
pdf, 824 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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