STL8N6LF6AG
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см. техническую документацию
см. техническую документацию
11 шт. со склада г.Москва, срок 6-7 дней
490 руб.
от 2 шт. —
390 руб.
от 5 шт. —
314 руб.
от 10 шт. —
288.54 руб.
Добавить в корзину 1 шт.
на сумму 490 руб.
Описание
Электроэлемент
Trans MOSFET N-CH 60V 32A Automotive AEC-Q101 8-Pin Power Flat EP T/R
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 32A(Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1340pF @ 25V |
| Manufacturer | STMicroelectronics |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | 8-PowerVDFN |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 4.8W(Ta), 55W(Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 9.6A, 10V |
| Series | Automotive, AEC-Q101, STripFETв(ў F6 |
| Supplier Device Package | PowerFlatв(ў(5x6) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250ВµA |
| Automotive | Yes |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | No Lead |
| Maximum Continuous Drain Current (A) | 32 |
| Maximum Drain Source Resistance (mOhm) | 27@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 4800 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | Unknown |
| Process Technology | STripFET |
| Product Category | Power MOSFET |
| Supplier Package | Power Flat EP |
| Supplier Temperature Grade | Automotive |
| Typical Fall Time (ns) | 7 |
| Typical Gate Charge @ 10V (nC) | 27 |
| Typical Gate Charge @ Vgs (nC) | 27@10V |
| Typical Input Capacitance @ Vds (pF) | 1340@25V |
| Typical Rise Time (ns) | 20 |
| Typical Turn-Off Delay Time (ns) | 56 |
| Typical Turn-On Delay Time (ns) | 9.6 |
Техническая документация
Datasheet
pdf, 859 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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