STD18NF25
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 шт. со склада г.Москва, срок 9-10 дней
720 руб.
Добавить в корзину 1 шт.
на сумму 720 руб.
Альтернативные предложения2
Описание
Электроэлемент
MOSFET, AEC-Q101, N-CH, 250V, 17A, 110W; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3
Технические параметры
Brand | STMicroelectronics |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 2500 |
Fall Time | 8.8 ns |
Id - Continuous Drain Current | 17 A |
Manufacturer | STMicroelectronics |
Maximum Operating Temperature | +175 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TO-252-3 |
Packaging | Reel |
Pd - Power Dissipation | 110 W |
Product Category | MOSFET |
Qg - Gate Charge | 29.5 nC |
Rds On - Drain-Source Resistance | 165 mOhms |
Rise Time | 17.2 ns |
RoHS | Details |
Series | N-channel STripFET |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 21 ns |
Typical Turn-On Delay Time | 8.8 ns |
Vds - Drain-Source Breakdown Voltage | 250 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 8.8 ns |
Id - Continuous Drain Current: | 17 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TO-252-3 |
Pd - Power Dissipation: | 110 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 29.5 nC |
Qualification: | AEC-Q101 |
Rds On - Drain-Source Resistance: | 165 mOhms |
Rise Time: | 17.2 ns |
Series: | STD18NF25 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | STripFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 21 ns |
Typical Turn-On Delay Time: | 8.8 ns |
Vds - Drain-Source Breakdown Voltage: | 250 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Вес, г | 0.35 |
Техническая документация
Datasheet
pdf, 529 КБ
Документация
pdf, 1156 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.