STP19NF20
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см. техническую документацию
см. техническую документацию
22 шт. со склада г.Москва, срок 6-7 дней
530 руб.
от 2 шт. —
430 руб.
от 5 шт. —
351 руб.
от 10 шт. —
322.56 руб.
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на сумму 530 руб.
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Описание
Электроэлемент
Описание Транзистор: N-MOSFET, MESH OVERLAY™, полевой, 200В, 9,45А, 90Вт Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 11 ns |
| Height | 9.15 mm |
| Id - Continuous Drain Current | 15 A |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 90 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 160 mOhms |
| Rise Time | 22 ns |
| RoHS | Details |
| Series | N-channel STripFET |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 19 ns |
| Typical Turn-On Delay Time | 11.5 ns |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 4.6 mm |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 11 ns |
| Id - Continuous Drain Current: | 15 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 90 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 24 nC |
| Rds On - Drain-Source Resistance: | 160 mOhms |
| Rise Time: | 22 ns |
| Series: | STP19NF20 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MESH OVERLAY |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 19 ns |
| Typical Turn-On Delay Time: | 11.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Automotive | No |
| Channel Type | N |
| ECCN (US) | EAR99 |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 15 |
| Maximum Diode Forward Voltage (V) | 1.6 |
| Maximum Drain Source Resistance (mOhm) | 160@10V |
| Maximum Drain Source Voltage (V) | 200 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 90000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | Mesh Overlay |
| Standard Package Name | TO-220 |
| Supplier Package | TO-220AB |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Fall Time (ns) | 11 |
| Typical Gate Charge @ 10V (nC) | 24 |
| Typical Gate Charge @ Vgs (nC) | 24@10V |
| Typical Input Capacitance @ Vds (pF) | 800@25V |
| Typical Rise Time (ns) | 22 |
| Typical Turn-Off Delay Time (ns) | 19 |
| Typical Turn-On Delay Time (ns) | 11.5 |
| Вес, г | 3.5 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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