STP6NK90Z
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см. техническую документацию
см. техническую документацию
15 шт. со склада г.Москва, срок 6-7 дней
570 руб.
от 2 шт. —
460 руб.
от 5 шт. —
384 руб.
от 10 шт. —
355.32 руб.
Добавить в корзину 1 шт.
на сумму 570 руб.
Альтернативные предложения3
Описание
Электроэлемент
Описание Транзистор N-МОП, полевой, +Z 900В 5,8A 140Вт 2Ом TO220
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 20 ns |
| Forward Transconductance - Min | 5 S |
| Height | 9.15 mm |
| Id - Continuous Drain Current | 5.8 A |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 140 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 46.5 nC |
| Rds On - Drain-Source Resistance | 2 Ohms |
| Rise Time | 45 ns |
| RoHS | Details |
| Series | N-channel MDmesh |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 20 ns |
| Typical Turn-On Delay Time | 17 ns |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 4.6 mm |
| кол-во в упаковке | 50 |
| Channel Type | N |
| Maximum Continuous Drain Current | 5.8 A |
| Maximum Drain Source Resistance | 2 Ω |
| Maximum Drain Source Voltage | 900 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Power Dissipation | 140 W |
| Minimum Gate Threshold Voltage | 3V |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 46.5 nC @ 10 V |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 20 ns |
| Forward Transconductance - Min: | 5 S |
| Id - Continuous Drain Current: | 5.8 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 140 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 46.5 nC |
| Rds On - Drain-Source Resistance: | 2 Ohms |
| Rise Time: | 45 ns |
| Series: | STP6NK90Z |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | SuperMESH |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 20 ns |
| Typical Turn-On Delay Time: | 17 ns |
| Vds - Drain-Source Breakdown Voltage: | 900 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Case | TO220-3 |
| Drain current | 3.65A |
| Drain-source voltage | 900V |
| Features of semiconductor devices | ESD protected gate |
| Gate-source voltage | ±30V |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting | THT |
| On-state resistance | 2Ω |
| Polarisation | unipolar |
| Power dissipation | 140W |
| Type of transistor | N-MOSFET |
| Вес, г | 3.5 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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